PART |
Description |
Maker |
ST2303SRG |
DMOS trench technology
|
TY Semiconductor Co., Ltd
|
ST2306SRG |
DMOS trench technology
|
TY Semiconductor Co., Ltd
|
STN8205D STN8205DST6RG |
DMOS trench technology
|
TY Semiconductor Co., Ltd
|
STP4407 |
The STP4407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
ST3422A |
The ST3422A is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
ST2341A |
ST2341A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
STN4822 |
STN4822 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.
|
Stanson Technology
|
STP4925 |
STP4925 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
Q67040S4721 Q67040S4723 Q67040S4725 IGW50N60T IGB5 |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ... LOW LOSS IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY
|
INFINEON[Infineon Technologies AG]
|
FGA15N120ANTD FGA15N120ANTD07 FGA15N120ANTDF109 FG |
1200V NPT Trench IGBT NPT Trench Technology, Positive temperature coefficient Extremely enhanced avalanche capability
|
Fairchild Semiconductor List of Unclassifed Manufacturers
|
IRF7530TR |
Trench Technology
|
International Rectifier
|